Phase shifting photomask fabrication method

Details Phase shifting photomask fabrication method Phase shifting photomask fabrication method

1998-03-27

2000-01-25

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430323, G03F 900

Patent

active

060176598

ABSTRACT:
A phase shifting photomask fabrication method includes the steps of forming a plurality of opaque patterns on a transparent substrate, forming a first protection layer pattern to cover portions of the opaque patterns and the transparent substrate, etching the transparent substrate to form a transmissive portion using the opaque patterns and the first protection layer pattern as a mask, forming a second protection layer on respective upper surfaces of the transmissive portion, the opaque patterns and the first protection layer pattern, removing a portion of the second protection layer to expose the first protection layer pattern, removing the first protection layer pattern and exposing the opaque patterns and the transparent substrate, growing an aluminum layer using the exposed opaque patterns as a seed to form an aluminum pattern, etching the exposed transparent substrate, anisotropically etching the aluminum pattern, and re-etching the transparent substrate surface exposed by anisotropically etching the aluminum pattern, thereby forming a phase transition region and a phase shifting region.

REFERENCES:
patent: 4373018 (1983-02-01), Reichmanis et al.
patent: 5254418 (1993-10-01), Kamon et al.
patent: 5281500 (1994-01-01), Cathey et al.
N. Takeyasu, et al.; Characterization of Direct-Contact Via Plug Formed by Use of Selective AI-CVD; Extended Abstracts of the 1993 International Conference on Solid State Devices, 1993; pp. 180-182.

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