Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1995-08-15
1997-02-25
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430313, 427 99, 4272552, 4272553, 216 48, G03F 900
Patent
active
056057768
ABSTRACT:
A phase-shifting photomask blank has a transparent substrate, a phase-shifting film deposited on the transparent substrate, the phase-shifting film including a transversely central composition which results in a reduced rate of side etching, and a patterned photoresist film masking the phase-shifting film. When the phase-shifting film is dry-etched through the patterned photoresist film into a desired circuit pattern, transversely different rates of side etching of the phase-shifting film are substantially equalized due to the reduced rate of side etching resulting from the transversely central composition. The circuit pattern includes openings defined by removal of the phase-shifting film and shifters left between the openings. The shifters have respective side surfaces free of steps and extending substantially perpendicularly from the transparent substrate. If the phase-shifting film comprises a film of molybdenum silicide oxide nitride deposited by sputtering, then the proportion of a nitrogen mono oxide gas in a sputtering gas is adjusted to control the transversely central composition of the phase-shifting film.
REFERENCES:
patent: 4661426 (1987-04-01), Matsuda et al.
patent: 5286581 (1994-02-01), Lee
M. Nakajima et al., "Attenuated phase-shifting mask with a single-layer absorptive shifter of CrO, CrON, MoSiO and MoSiON film", The International Society for Optical Engineering, vol. 2197, pp. 111-121, 1994.
Y. Saito et al., "Attenuated phase shift mask blanks with oxide or oxi-nitride of Cr or MoSi absorptive shifter", The International Society for Optical Engineering, vol. 2254, pp. 61-63, 1994.
N. Yoshioka et al., "Practical attenuated phase-shifting mask with a single-layer absorptive shifter of MoSiO and MoSiON for ULSI fabrication", International Electron Devices meeting 1993, Washington, D.C., Dec. 8, 1993.
Hayashi Atsushi
Isao Akihiko
Kawada Susumu
Maetoko Kazuyuki
Yoshioka Nobuyuki
Mitsubishi Denki & Kabushiki Kaisha
Rosasco S.
Ulvac Coating Corporation
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