Phase-shifting masks for photolithography

Details Phase-shifting masks for photolithography Phase-shifting masks for photolithography

1997-10-10

1999-06-29

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059167114

ABSTRACT:
A method of designing phase shifting masks with improved resolution. Auxiliary transmissive phase regions with properly selected locations and dimensions are introduced to eliminate unwanted interference patterns. A usual opaque region between the transmissive features that are phase-conflicting to one another is partially or entirely replaced with a transmissive region of an opposite phase with respect to the phase of the transmissive features. In positive photoresist layouts, the light-absorbing features are partially or entirely made transmissive while an opposite and uniform phase is maintained throughout the transmissive background. Segmenting features with at least one auxiliary phase region and adjusting attenuation of different features can further improve the performance.

REFERENCES:
patent: 5288568 (1994-02-01), Cathey, Jr.
patent: 5429897 (1995-07-01), Yoshioka et al.
patent: 5468578 (1995-11-01), Rolfson
patent: 5480747 (1996-01-01), Vasudev
patent: 5538815 (1996-07-01), Oi et al.
patent: 5686208 (1997-11-01), Le et al.

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