Phase shifting mask wherein light transmitted through second tra

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430312, 430313, 430314, G03F 900

Patent

active

054879639

ABSTRACT:
An improved phase shifting mask suitable to form rectangular isolated fine patterns of a repetitive arrangement of a fine structure is disclosed. The phase shifting mask includes square patterns forming first and second light transmission areas disposed alternately and repetitively so that the ratio between the pattern width of the light transmission areas and the distance between the centers of the patterns may be about 1:2. The second light transmission areas provide transmission light having a phase different by 180 degrees from that of transmission light through the first light transmission areas. Interference of the transmission light through the two different kinds of areas reduces the intensity of light outside the patterns to enhance the resolution. Further, side lobe light intensifies the intensity of main lobe light of an adjacent pattern so that it contributes to formation of a good pattern. The phase shifting mask can be applied to formation of contact holes of a semiconductor integrated circuit which are a repeat pattern of a fine structure.

REFERENCES:
patent: 5364716 (1994-11-01), Nakagawa et al.

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