Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1994-04-29
1995-12-05
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430311, 430312, 430323, 430224, 428156, G03F 900
Patent
active
054728118
ABSTRACT:
A multi-layer PSM structure with multi-layer optical coating disposed between a quartz substrate and a surrounding medium, which typically is air. The multi-layer coating is comprised of a high index of refraction material overlying the quartz and a lower index of refraction material overlying the first. The multi-layer coating essentially functions as an anti-reflective coating to reduce scattering and reflection at the interface boundaries.
REFERENCES:
patent: 3604778 (1971-09-01), Burckhardt
patent: 4013338 (1977-03-01), Sato et al.
patent: 4037918 (1977-07-01), Kato
patent: 4068018 (1978-01-01), Hashimoto et al.
patent: 4119483 (1978-10-01), Hubsch et al.
patent: 4174219 (1979-11-01), Andres et al.
patent: 4248948 (1981-02-01), Matsuda
patent: 4360586 (1982-11-01), Flanders et al.
patent: 4374911 (1983-02-01), Hartley
patent: 4377627 (1983-03-01), Vinton
patent: 4402600 (1983-09-01), Araihara
patent: 4411972 (1983-10-01), Narken et al.
patent: 4414317 (1983-11-01), Culp et al.
patent: 4434224 (1984-02-01), Yoshikawa et al.
patent: 4440840 (1984-04-01), Yamaguchi
patent: 4529686 (1985-07-01), Kraus
patent: 4686162 (1987-08-01), Stangl et al.
patent: 4806442 (1989-02-01), Shirasaki et al.
patent: 4806454 (1989-02-01), Yoshida et al.
patent: 4842969 (1989-06-01), Kawatsuki et al.
patent: 4852973 (1989-08-01), Durnin et al.
patent: 4881257 (1989-11-01), Nakagawa
patent: 4885231 (1989-12-01), Chan
patent: 4890309 (1989-12-01), Smith et al.
patent: 4902899 (1990-02-01), Lin et al.
patent: 4935334 (1990-06-01), Boettiger et al.
patent: 4939052 (1990-07-01), Nakagawa
patent: 4997747 (1991-03-01), Yoshida et al.
patent: 5024726 (1991-06-01), Fujiwara
patent: 5045417 (1991-09-01), Okamoto
patent: 5079113 (1992-01-01), Ohta et al.
patent: 5153083 (1992-10-01), Garofalo et al.
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5208125 (1993-05-01), Lowrey et al.
patent: 5217830 (1993-06-01), Lowrey
patent: 5219686 (1993-06-01), Kamon
patent: 5225035 (1993-07-01), Rolfson
patent: 5229230 (1993-07-01), Kamon
Patent Abstracts of Japan, vol. 17, No. 257, (E-1368) May 20, 1993, & JP,A,05 003 146 (Hitachi Ltd) 8 Jan. 1993.
IBM Technical Disclosure Bulletin, vol. 29, No. 3, Aug. 1986, N.Y., US, p. 1328, `Method to Produce Sizes in Openings in Photo Images Smaller than Lithographic Minimum Size`.
Patent Abstracts of Japan, vol. 16, No. 382, (P-14382) Aug. 14, 1992 & JP,A,04 123 060 (Fujitsu Ltd) 23 Apr. 1992 see abstract.
IBM Technical Disclosure Bulletin, vol. 25, No. 12, May 1983, N.Y. US, pp. 6408-6414, `Optical Recording Disc System and Memory Medium,' p. 6408.
International Conference on Microlithography, Rome, Italy, 17-19 Sep. 1991, 79-85 ISSN 0167-9317, pp. 79-86, Lin BJ `The optimum numerical aperture for attenuated phase-shifting masks`.
"Four More Significant Japanese Advances in Phase Shifting Technology," Semiconductor International, Dec. 1991, p. 16.
"Improved resolution of an i-line stepper using a phase-shifting mask," Tsuneo Terasawa et al., J. Vac. Sci. Technol. B 8(6) Nov./Dec. 1990, pp. 1300-1308.
"Fabrication of 64M Dram with i-Line Phase-Shift Lithography," K. Nakagawa et al., IEEE, Apr. 1990, pp. 817-820.
"Conjugate Twin-Shifter for the New Phase Shift Method to High Resolution Lithography," H. Ohtsuka et al., SPIE, vol. 1463, Optical/Laser Microlithography IV (1991), pp. 112-123.
"Exploration of Fabrication Techniques for Phase-Shifting Masks", A. K. Pfau et al., SPIE, vol. 1463, Optical/Laser Microlithography IV (1991), pp. 124-134.
"Transparent phase shifting mask with multistage phase shifter and comb-shaped shifter," Hisashi Watanabe et al., SPIE, vol. 1463, Optical/Laser Microlithography IV (1991), pp. 101-110.
"Phase-Shifting Mask and FLEX method for Advanced Photo-lithography," Hiroshi Fukuda et al., SPIE, vol. 1264, Optical/Laser Microlithography III (1990), pp. 14-25.
"The Phase-Shifting Mask II: Imaging Simulations & Submicrometer Resist Exposures," Marc D. Levenson et al., IEEE, vol. ED-31, No. 6, Jun. 1984, pp. 753-763.
"New phase-shifting mask with highly transparent SiO2 phase shifters," Isamu Hanyu et al., SPIE vol. 1264 Optical/Laser Microlithography III (1990), pp. 167-177.
"Transparent Phase Shifting Mask," H. Watanabe et al., IEEE, Apr. 1990, pp. 821-824.
"A 5.9.mu.m.sup.2 Super Low Power SRAM Cell Using a New Phase-Shift Lithography," T. Yamanaka et al., IEEE, Apr. 1990, pp. 477-480.
"Phase Shift Masking Traced to 1976 Patent", Semiconductor International, Jun. 1993, pp. 32-34.
"Improving Resolution in Photolithography with a Phase-Shifting Mask", Marc D. Levenson et al., IEEE Transaction on Electron Devices, vol. ED-29, No. 12, Dec. 1982, pp. 1828-1836.
"0.2.mu.m or Less I-Line Lithography By Phase-Shifting-Mask Technology", Hideyuki Jinbo and Yoshio Yamashita, Semiconductor Technology Lab, Oki Electric Industry Co., Japan, IEDM 90 (1990) pp. 825-828.
"Sub-Half-Micron i-Line Lithography by Use of LMR-UV Resist", Hideyki Jinbo et al., Japanese Journal of Applied Physics, vol. 28, No. 10, Oct., 1989, pp. 2053-2057.
"Subhalf-micron patterning of negative working resist by using new phase-shifting masks", Hideyki Jinbo et al., Journal of Vacuum Science & Technology B, Second Series, vol. 8, No. 6, Nov./Dec. 1990, pp. 1745-1748.
"0.3.mu.-micron optical lithography using a phase-shifting mask", Tsuneo Terasawa et al., SPIE, vol. 1088 Optical/Laser Microlithography II (1989), pp. 25-32.
"What IS a Phase-Shifting Mask?", Marc D. Levenson, SPIE, vol. 1496, 10th Annual Symposium on Microlithography (1990), pp. 20-26.
"Phase-Shifting and Other Challenges in Optical Mask Technology", Burn J. Lin, SPIE, vol. 1496, 10th Annual Sumposium on Microlithography (1990) pp. 54-79.
"Modeling Phase Shifting Masks", Andrew R. Neureuther, SPIE, vol. 1496, 10th Symposium on Microlithography (1990), pp. 80-88.
"New Phase Shifting Mask with Self-aligned Phase Shifters for a Quarter Micron Photolithography," IEEE, A. Nitayama et al., IEDM Proceedings, IEDM-89, pp. 57-60, Jul. 1989.
"The Optimum Numerical Aperature for Optical Projection Microlithography" B. J. Lin et al., SPIE Proceedings, vol. 1463, pp. 42-53, 1991.
"The optimum numerical aperature for attenuated phase-shifting masks," B. J. Lin, Microelectronic Engineering 17 (1992) pp. 79-86.
"A critical examination of submicron optical lithography using simulated project images," Alan E. Rosenbluth et al., J. Vac. Sci. Technol. B1(4) Oct.-Dec. 1983, pp. 1190-1195.
Low Kah K.
Vasudev Prahalad K.
Kidd William W.
Motorola Inc.
Rosasco S.
Sematech Inc.
LandOfFree
Phase shifting mask structure with multilayer optical coating fo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Phase shifting mask structure with multilayer optical coating fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase shifting mask structure with multilayer optical coating fo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1373245