Phase-shifting mask for photolithography in semiconductor fabric

Details Phase-shifting mask for photolithography in semiconductor fabric Phase-shifting mask for photolithography in semiconductor fabric

1998-04-07

2000-01-04

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

06010807&

ABSTRACT:
A phase-shifting mask (PSM) is provided for use in a photolithographic process in semiconductor fabrications. The phase-shifting mask includes a quartz plate and a plurality of mask pieces located at predefined locations over said quartz plate. Each of said mask pieces includes a semi-transparent masking layer formed on said quartz plate and a semi-transparent phase-shifting layer formed on the periphery of said semi-transparent masking layer. The phase-shifting mask has the benefits of facilitating auto generation of the mask patterns thereon through computer graphic means and increasing the resolution and contrast of the pattern definition in the photolithographic process.

REFERENCES:
patent: 5429897 (1995-07-01), Yoshioka et al.

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