Phase-shifting mask, exposure method and method for measuring am

Details Phase-shifting mask, exposure method and method for measuring am Phase-shifting mask, exposure method and method for measuring am

1998-02-18

1999-08-10

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059357380

ABSTRACT:
To a projection lens system is added spherical aberration of 0.1.lambda., and the exposure is performed by using a phase-shifting mask having a phase difference of 200 degrees which is provided with a phase error of 20 degrees corresponding to the spherical aberration amount. Therefore, the focus characteristic can be more remarkably flattened as compared with the prior art in which the phase difference of the mask is set to 180 degrees and the spherical aberration of the projection lens system is set to zero, so that the depth of focus can be enlarged by about 0.2 micron and the precision of the pattern dimension of semiconductor devices manufactured by using the exposure method can be enhanced.

REFERENCES:
patent: 5710620 (1998-01-01), Taniguchi
Effect of Lens Aberration on Hole Pattern Fabrication Using Halftone Phase-Shifting Masks; Akihiro Otaka et al.; Digest of Papers Photomask Japan 1997.

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