Phase shifting mask and method of manufacturing the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, 430323, 430324, G03F 900

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active

054379474

ABSTRACT:
An edge enhancement phase shifting mask having a recessed opaque layer which optimally exhibits the phase shifting effect at edge portion is disclosed, wherein the mask comprises a transparent substrate having at least one or more trenches spaced apart from each other by a predetermined distance, an opaque layer filling some portion of the trench, and a phase shifting layer formed on the substrate area between the trenches. And the method of manufacturing such a mask comprises the steps of forming a first photoresist pattern by etching the coated photoresist film on a transparent substrate, forming at least one or more trenches by etching the transparent substrate masked with the patterned photoresist layer, forming a opaque layer occupying some portion of the trench through etch back process applying to a deposited metal layer on the whole surface of the substrate, forming a phase shifting layer over the surface of the non-etched transparent substrate and exposing a substrate area between the phase shifting layer and the opaque layer.

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Paper Entitled "Fabrication of 64M DRAM with I-Line Phase-Shift Lithography" by K. Nakagawa, et al. Published in the Technical Digest of the International Electron Devices Society of IEEE Dec. 9-12, 1990.
Paper Entitled "Spatial Filtering for Depth of Focus and Resolution Enhancement in Optical Lithography" by H. Fukuda, et al., Published in J. Vac. Sci. Technol. Nov./Dec. 1991.

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