Phase shifting mask and method of manufacturing the same

Details Phase shifting mask and method of manufacturing the same Phase shifting mask and method of manufacturing the same

1997-12-30

1999-09-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059586303

ABSTRACT:
The present invention is directed to the prevention of a decrease in the resolution of a film shifter-type alternating phase shifting mask, and the complexity of the mask forming step, and discusses the structure of a novel alternating phase shifting mask, and a novel manufacturing method which does not require the etching for forming a shifter. To achieve this object, hydrogen silsesquioxane (flowable oxide (FOX)) is used as the material for the phase shifter. The optical characteristics of this film are very close to those of a quartz substrate, and the property that the in-surface variation (.+-.3 .sigma.) of the thickness is 1% or less, is close to that of SOG (Spin On Glass). The most advantageous aspect of the FOX being used for the mask manufacturing process is that, since the FOX film is etched at the same time as the resist development, with the alkaline developing solution used for etching the resist, there is no need to provide a particular step for etching the shifter.

REFERENCES:
patent: 3924093 (1975-12-01), Feldman et al.
patent: 3934057 (1976-01-01), Moreau et al.
patent: 4657843 (1987-04-01), Fukuyama et al.
patent: 5238787 (1993-08-01), Haluska et al.
patent: 5322749 (1994-06-01), Han
patent: 5437947 (1995-08-01), Hur et al.
patent: 5567550 (1996-10-01), Smayling
patent: 5731214 (1998-03-01), Kurihara

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