Phase shifting lithographic process

Details Phase shifting lithographic process Phase shifting lithographic process

2006-03-28

2006-03-28

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C430S005000, C430S396000

Reexamination Certificate

active

07018788

ABSTRACT:
A dual phase shifting mask (PSM)/double exposure lithographic process for manufacturing a shrunk semiconductor device. A semiconductor wafer having a photoresist layer coated thereon is provided. A first phase shift mask is disposed over the semiconductor wafer and implementing a first exposure process to expose the photoresist layer to light transmitted through the first phase shift mask so as to form a latent pattern comprising a peripheral unexposed line pattern in the photoresist layer. The first phase shift mask is then replaced with a second phase shift mask and implementing a second exposure process to expose the photoresist layer to light transmitted through the second phase shift mask so as to remove the peripheral unexposed line pattern.

REFERENCES:
patent: 6849393 (2005-02-01), Lin

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