Phase shifter with slow transition detector

Communications: electrical – Condition responsive indicating system – Specific condition

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Details

340658, 361 86, 324510, G08B 2100

Patent

active

047542659

ABSTRACT:
A phase shifter uses a PIN diode or diode pairs operated in a switching mode to switch transmission-line elements for phase-shifting radio frequency or microwave signals. A drive circuit for each diode(s) includes a FET switch controlled by a first level of a bilevel control signal to apply B+ to forward bias the diode(s) with a forward current. When forward biased, the active region of the diode(s) becomes flooded with charge carriers. The first FET switch is turned OFF by a second level of the bilevel control signal, and a second FET switch is turned ON to apply a reverse bias voltage to the diode(s) to render them nonconductive. Before the diode(s) become nonconductive, the excess charge carriers must be swept out of the diode(s). To achieve fast switching, the second FET switch must draw a large current for a short time as the excess charge carriers are removed. In a phased-array antenna, it is difficult to locate defective components, and very difficult to locate a driver circuit/diode combination suffering from low switching speed. A monitor circuit includes a voltage divider which in effect translates the diode voltage to an input terminal of an EXOR gate. The control signal is applied to the second input terminal. The EXOR produces a fault indicative level for a short time after a transition of the control signal. A strobe timed to occur during this interval latches the fault indicative signal and the latched level is sent to a central monitor location and also lights a lamp at the module in which the defect occurs.

REFERENCES:
patent: 4005361 (1977-01-01), Lerner
An article entitled "Gold Metalization Enriches Silcon FETS", which appeared at pp. 107-113 of the Aug. 1985 of Microwave & RF magazine.

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