Etching a substrate: processes – Forming or treating mask used for its nonetching function
Patent
1995-09-01
1998-02-17
Breneman, R. Bruce
Etching a substrate: processes
Forming or treating mask used for its nonetching function
216 24, 430 5, G03F 900, B44C 122
Patent
active
057188297
ABSTRACT:
A phase shift structure and a method for forming the phase shift structure are provided. The phase shift structure includes: a transparent substrate; a phase shifter etched into the substrate; and a pair of opaque members formed on the substrate on either side of the phase shifter. The phase shift structure is adapted to print an isolated linear feature such as an isolated line for a semiconductor integrated circuit. During a lithographic process using the phase shift structure, the inside edges of the opaque members do not print due to the effect of the phase shifter. The longitudinal edges of the printed feature correspond to the outside edges of the opaque members. The width of the phase shifter can be adjusted to minimize light leakage in the interior of the printed feature.
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Pierrat et al., "Phase Shifting Mask Topography Effects on Lithographic Image Quality," SPIE vol. 1927, pp. 28-41, 1993.
Phase-Shifting Mask Topography Effects on Lithographic Image Quality, Christophe Pierrat et al., SPIE vol. 1927, Optical/Laser Micro-lithography, 1993.
Improving Resolution in Photolithography with a Phase-Shifting Mask, Marc D. Levenson et al., IEEE Transactions on Electron Devices, vol. Ed 29, No. 12, Dec., 1982, pp. 1828-1836.
Phase-Shifting and Other Challenges in Optical Mask Technology, B. J. Lin, IBM General Technology Division, Hopewell Junction, NY, Sep., 1990.
Adjodha Michael E.
Breneman R. Bruce
Gratton Stephen A.
Micro)n Technology, Inc.
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