Phase shift mask of attenuation type and manufacturing method th

Details Phase shift mask of attenuation type and manufacturing method th Phase shift mask of attenuation type and manufacturing method th

1997-11-07

2000-04-11

Angebranndt, Martin

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430320, G03F 108, H01L 21027

Patent

active

060486473

ABSTRACT:
In accordance with a phase shift mask of attenuation type and a manufacturing method thereof, at a prescribed region of a phase shifter portion near and around a light transmitting portion, an auxiliary pattern is provided for controlling an amount of exposure light onto a portion of an exposed material corresponding to this region. Auxiliary pattern enables to cancel light intensity of a side lobe, thereby preventing generation of a region having a high light intensity (a side lobe) at the periphery of the light transmitting portion of the phase shift mask of attenuation type.

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patent: 5458998 (1995-10-01), Takekuma et al.
patent: 5468577 (1995-11-01), Bae
"Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks", Terasawa et al., JJAP Series 5 Proc. of 1991 Intern. MicroProcess Conference, pp. 3-9.

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