Phase shift mask, method of exposure, and method of...

Details Phase shift mask, method of exposure, and method of... Phase shift mask, method of exposure, and method of...

2005-03-01

2005-03-01

Letscher, Geraldine (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S312000, C430S313000, C430S394000

Reexamination Certificate

active

06861178

ABSTRACT:
A phase shift mask including a first phase shifter through which light passes by a first optical path length; a second phase shifter through which light passes by a second optical path length inverted in an optical phase from the first optical path length, the second phase shifter formed away from the first phase shifter by a predetermined distance; a light-blocking part formed around the first phase shifter and second phase shifter; and a correction pattern provided at a part of at least one of the first phase shifter and second phase shifter for correcting a distribution of light intensity between light passing through the first phase shifter and light passing through the second phase shifter, and method of exposure and method of producing a semiconductor device using the phase shift mask.

REFERENCES:
patent: 5650854 (1997-07-01), Sugawara
patent: 6534224 (2003-03-01), Lukanc
patent: 6576377 (2003-06-01), Kikuchi

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