Phase shift mask for forming contact holes

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

Patent

active

057731713

ABSTRACT:
A phase shift mask for forming contact holes arranged in longitudinal, transversal and diagonal directions, capable of achieving an improvement in light contrast in the formation of contact holes, thereby forming a fine contact hole pattern. The phase shift mask includes a shifter formed on a transparent substrate and patterned to define windows respectively arranged at contact hole regions where the contact holes are formed. The windows consist of first windows each having a central portion defined by a portion of the shifter and an edge portion defined by an exposed portion of the substrate arranged around the portion of the shifter, and second windows each having a central portion defined by an exposed portion of the substrate and an edge portion defined by a portion of the shifter arranged around the exposed portion of the substrate. The first and second windows are arranged adjacent to each other in longitudinal and transversal directions while being arranged in an alternating manner in the diagonal direction, whereby each of the windows exhibits a minimum light intensity at the edge portion thereof and a maximum light intensity at the central portion thereof.

REFERENCES:
patent: 5370975 (1994-12-01), Nakatani
patent: 5458998 (1995-10-01), Takekuma et al.
patent: 5641592 (1997-06-01), Kim

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