Phase shift mask comprising light shielding regions having a mul

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, 430324, G03F 900

Patent

active

057120633

ABSTRACT:
A phase shift mask for forming contact holes in the fabrication of highly integrated semiconductor devices. The phase shift mask includes a transparent substrate, a plurality of light exposure regions respectively defined by patterns formed on portions of the transparent substrate corresponding to contact holes which will be formed using the phase shift mask, the patterns including those comprised of a first phase shift film and those comprised of a second phase shift film exhibiting a difference in phase from the first phase shift film. The phase shift mask also includes a plurality of light shield regions respectively defined by patterns formed on portions of the transparent substrate not covered with the patterns defining the light exposure regions. The patterns of the light shield regions include those comprised of the first phase shift film and those comprised of the second phase shift film while the light shield regions each have a double box structure including an inner box and an outer box respectively consisting of the patterns of the first and second phase shift films associated with the light shield region. The patterns of the first and second phase shift films define the light exposure regions and light shield regions are arranged in such a manner that adjacent patterns are different in phase from each other.

REFERENCES:
patent: 5246800 (1993-09-01), Muray
patent: 5370975 (1994-12-01), Nakatani

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