Phase shift mask and phase shift mask blank

Details Phase shift mask and phase shift mask blank Phase shift mask and phase shift mask blank

1997-03-27

1999-08-24

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

428432, G03F 900

Patent

active

059423560

ABSTRACT:
A half tone type phase shift mask as well as a phase shift mask blank for the mask is formed with a thin film light translucent portion made of essentially, nitrogen, metal, and silicon. The containing rate of each element and ratio in the thin film is specified in a certain range to improve film characteristics, such as acid resistance, photo resistance, conductivity, refractive index rate (film thickness), light transmission rate, etching selectivity, etc. of the light translucent portion. The phase shift mask satisfies optical characteristics (i.e., light transmitting rate and phase shift amount) with high precision, as well as reduces defects in the thin film.

REFERENCES:
patent: 5804337 (1998-09-01), Mitsui et al.

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