Phase shift mask and method of making the same

Details Phase shift mask and method of making the same Phase shift mask and method of making the same

1992-11-13

1994-06-21

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430396, 430311, G03F 900

Patent

active

053227492

ABSTRACT:
A phase shift mask comprising a light-transmitting substrate, a plurality of uniformly spaced phase shift regions formed over the light-transmitting substrate, and a plurality of light shield regions formed over the light-transmitting substrate, each of the light shield regions being disposed at opposite sides of the phase shift regions. Each light shield region has substantially the same thickness as the phase shift regions. The phase shift regions are made of a conductive metal, thereby requiring no additional conductive film for avoiding charging phenomena. The light shield regions are made of an inexpensive metal such as zinc, which typically is less expensive than materials such as chromium. Any environmental contamination caused by waste disposal or the like also may be avoided in that heavy metals such as chromium need not be used.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5208125 (1993-05-01), Lowrey et al.
IEDM 90-821, Transparent Phase Shifting Mask-by H. Watanabe, Y. Todokoro, and M. Inoue, Kyoto Research Laboratory, Matsushita Electronics Corporation 19, Nishikujo-Kasugacho, Minami-ku, Koyto 601 Japan, pp. 33.2.1,33.2.2,33.2.3,33.2.4.
**Handbook of VLSI Microlithography --Edited by William B. Glendinning (Nobleboro, Maine) and John N. Helbert (Advanced Technology Center) Mototola, Inc., Mesa, Arizona, pp. 352,353,354,355,356,357,364.

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