Phase shift mask and method of fabricating the same

Details Phase shift mask and method of fabricating the same Phase shift mask and method of fabricating the same

1994-12-20

1996-07-16

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430323, 430324, 216 12, 216 48, 216 47, G03F 900

Patent

active

055366031

ABSTRACT:
A photoresist pattern is formed on a quartz substrate. The quartz substrate is dipped into a silicon oxide supersaturated solution of hydrofluoric acid, and a silicon oxide is precipitated out of the supersaturated solution, thereby forming an SiO.sub.2 film on that exposed surface of the quartz substrate which is not covered with the photoresist pattern. After that, the photoresist pattern is ashed by oxygen plasma, and the ashed pattern is removed. The SiO.sub.2 film remaining on the quartz substrate serves as a phase shifter.

REFERENCES:
patent: 4954218 (1990-09-01), Okumura et al.
patent: 5114760 (1992-05-01), Takemura et al.
patent: 5380609 (1995-01-01), Fujita et al.
Nakagawa et al., "Phase Shift Exposure Development of Shifter Light-Shielding Method Prioritizing Easiness of Use", Nikkei Microdevices, May 1991, pp. 53-58.
"Investigation of SOG, Sputtering, and CVD", Nikkei Microdevices, May 1991, p. 64.

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