Phase shift mask and method for forming phase shift mask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430314, 430322, 430323, G03F 900

Patent

active

055915507

ABSTRACT:
A halftone phase shift mask and a method for forming a halftone phase shift mask. The method includes: forming a halftone pattern material layer on a substrate; defining positions for forming more than one open region of a desired pattern and defining positions for forming one or more dummy open regions that can offset respective new side lobes having a high intensity formed by overlap of side lobes of light irradiated onto the substrate as well as the halftone material layer; and forming the patterned open regions and dummy open regions that can offset respective new side lobes at the defined positions on the halftone pattern material layer by subjecting the halftone pattern material layer to patterning.

REFERENCES:
patent: 5409789 (1995-04-01), Ito

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Phase shift mask and method for forming phase shift mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase shift mask and method for forming phase shift mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase shift mask and method for forming phase shift mask will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1762890

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.