Phase shift mask and method for fabricating the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, 430324, G03F 108

Patent

active

057562350

ABSTRACT:
A phase shift mask provided with an alignment error measuring pattern which is a phase shift film pattern portion formed in a space defined between dense patterns of the phase shift mask having an alternating type pattern structure so that an error in alignment between a chromium pattern and a phase shift film pattern occurring in the fabrication of the phase shift mask can be measured by checking, through a microscope, a wafer provided with a pattern formed using the phase shift mask. The phase shift film pattern portion is arranged on the central portion of a quartz substrate.

REFERENCES:
patent: 4835078 (1989-05-01), Harvey et al.
patent: 5153083 (1992-10-01), Garofalo et al.
patent: 5262257 (1993-11-01), Fukuda et al.
patent: 5604059 (1997-02-01), Imura et al.

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