Phase shift mask and manufacturing method thereof and exposure m

Details Phase shift mask and manufacturing method thereof and exposure m Phase shift mask and manufacturing method thereof and exposure m

1995-06-07

1997-05-13

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430324, 428432, 427595, G03F 900

Patent

active

056291140

ABSTRACT:
A second light transmit portion of a phase shift mask is formed of a molybdenum silicide nitride oxide or a molybdenum silicide oxide a chromium nitride oxide, or a chromium oxide, or a chromium carbide nitride oxide film converting a phase of transmitted exposure light by 180.degree. and having the transmittance of 5-40%. In the manufacturing method of the second light transmit portion, a molybdenum silicide nitride oxide film or a molybdenum silicide oxide film a chromium nitride oxide film, or a chromium oxide film, or a carbide nitride oxide film is formed by a sputtering method. Consequently, with a conventional sputtering apparatus, the second light transmit portion can be formed, and additionally, etching process of the phase shifter portion is required only once, so that probabilities of defects and errors in the manufacturing process can be decreased.

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patent: 5286581 (1994-02-01), Lee
"Imaging Characteristics of Multi-Phase-Shifting and Halftone Phase-Shifting Masks," JJAP Series 5 Proc. of 1991 Intern. Microprocess Conference, pp. 3-9, 1991.
"Si-N Attenuated Phase Shift Layer for Phase Shift Mask Application," IBM Technical Disclosure Bulletin, pp. 440-441, vol. 35, No. 3, Aug. 1992.

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