Phase shift mask and manufacturing method thereof

Details Phase shift mask and manufacturing method thereof Phase shift mask and manufacturing method thereof

1994-10-05

1996-01-09

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430324, G03F 900

Patent

active

054827990

ABSTRACT:
A phase shift mask of the present invention includes a quartz substrate transmitting exposure light, a transmitting film having a predetermined transmittance formed on the main surface of quartz substrate, a light transmitting portion from which quartz substrate is exposed is formed in a predetermined region, and a phase shifter portion formed of a single material on light transmitting film converting the phase angle by approximately 180.degree. and having a transmittance of 3-20% with respect to the exposure light transmitted through light transmitting portion. As a result, a defect generated in the phase shifter portion can be easily detected with an ordinary defect inspection apparatus without deteriorating the phase shifter portion as a phase shift mask.

REFERENCES:
patent: 4661426 (1987-04-01), Matsuda et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 5286581 (1994-02-01), Lee
"Imaging Characteristics of Multi-Phase Shifting and Halftone Phase-Shifting Masks", Terasawa et al., JJAP Series 5 Proc. of 1991 Intern. MicroProcess Conference, pp. 3-9.

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