Phase shift mask and its inspection method

Details Phase shift mask and its inspection method Phase shift mask and its inspection method

1994-02-17

1995-08-08

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430312, 430313, G03C 500

Patent

active

054397677

ABSTRACT:
A periodic line and space pattern made of chromium film is formed on a glass substrate, and a phase shifter is arranged on every other transparent portion of the line and space pattern. Using a stepper and the phase shift mask, photoresist film coated on a wafer is exposed several times to light of i-line by varying the focus, then developed. Next, the width Ws of the photoresist pattern formed by the exposure to the light through the phase shifter, and the width Wo of the photoresist pattern formed by the exposure to the light without passing through the phase shifter are measured. Based on the relation between Ws and Wo for defocusing, the transmittance error and the phase shift angle error of the phase shifter are obtained.

REFERENCES:
patent: 5258246 (1993-11-01), Berger et al.
patent: 5275896 (1994-01-01), Garofalo et al.
A. P. Gosh et al., "Direct Phase Measurements In Phase Shift Masks", SPIE, vol. 1673, Integrated Circuit Metrology, Inspection, and Process Control VI Aug. 1992, pp. 242-254.

Affiliated with

Also associated with

Rating

Phase shift mask and its inspection method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase shift mask and its inspection method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase shift mask and its inspection method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-970285