Phase-separated dielectric structure fabrication process

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – At least one aryl ring which is part of a fused or bridged...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C524S376000

Reexamination Certificate

active

07829625

ABSTRACT:
A process for fabricating an electronic device including: depositing a layer comprising a semiconductor; liquid depositing a dielectric composition comprising a lower-k dielectric material, a higher-k dielectric material, and a liquid, wherein the lower-k dielectric material and the higher-k dielectric material are not phase separated prior to the liquid depositing; and causing phase separation of the lower-k dielectric material and the higher-k dielectric material to form a phase-separated dielectric structure wherein the lower-k dielectric material is in a higher concentration than the higher-k dielectric material in a region of the dielectric structure closest to the layer comprising the semiconductor, wherein the depositing the layer comprising the semiconductor is prior to the liquid depositing the dielectric composition or subsequent to the causing phase separation.

REFERENCES:
patent: 5374453 (1994-12-01), Swei et al.
patent: 5883219 (1999-03-01), Carter et al.
patent: 6136702 (2000-10-01), Chandross et al.
patent: 6280794 (2001-08-01), Tu et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6706464 (2004-03-01), Foster et al.
patent: 6809371 (2004-10-01), Sugiyama
patent: 6888249 (2005-05-01), Kohl et al.
patent: 6914147 (2005-07-01), Lee et al.
patent: 7098525 (2006-08-01), Bai et al.
patent: 7348280 (2008-03-01), Hsu et al.
patent: 7482286 (2009-01-01), Misra et al.
patent: 2006/0214154 (2006-09-01), Yang et al.
patent: 2006/0231908 (2006-10-01), Liu et al.
patent: 2006/0234430 (2006-10-01), Liu et al.
patent: 2008/0237581 (2008-10-01), Wu et al.
K. Mohomed et al., Polymer “A broad spectrum analysis of the dielectric properties of Poly (2-hydroxyethyl methacrylate)” 46, p. 3847-3855 (2005).
J. Remenar, et al., Mat. Res. Soc. Proc. “Templating nanopores into poly(methylsilsesquioxane): new low-k dielectric coatings suitable for microelectronics applications” 511, p. 69-74 (1998).
V. Ginzburg, Macromolecules “High-dielectric constant self assembled nodular structures in polymer/gold nanoparticle films” 39, p. 3901-3906 (2006).
Facchetti et al., “Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics”, Adv. Mater., vol. 17, pp. 1705-1725 (2005).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Phase-separated dielectric structure fabrication process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase-separated dielectric structure fabrication process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase-separated dielectric structure fabrication process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4150590

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.