Phase modulation semiconductor laser array

Details Phase modulation semiconductor laser array Phase modulation semiconductor laser array

1989-03-20

1990-02-20

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, 372 48, 372 96, 372 26, 372 28, 372 29, 372 32, H01S 319, H01S 313

Patent

active

049032755

ABSTRACT:
A phase-locked semiconductor laser array is dephased-locked by forming at least two p-type contacts electrically isolated from one another coupled to one side of the active region and a single contact layer coupled to the other side of the active region. The same current is applied to two p-type contacts to form a single phase-locked far-field lobe. A different current is applied to one of the two p-type contacts to drive one contact harder than the other to form a dephased multiple lobe beam. An effective aperture at the receiver receives the in-phase single lobe and blocks the multiple lobes to produce a modulation effect at the receiver.

REFERENCES:
patent: 4101845 (1978-07-01), Russer
patent: 4331938 (1982-05-01), Limm et al.
patent: 4412234 (1983-10-01), Matsuda et al.
patent: 4547396 (1985-10-01), Botez et al.
patent: 4622671 (1986-11-01), Tsang
patent: 4641311 (1987-02-01), Ackley
patent: 4669086 (1987-05-01), Kaede et al.
patent: 4723252 (1988-02-01), Botez et al.
patent: 4773076 (1988-09-01), Yamamoto et al.
patent: 4788689 (1988-11-01), Tokuda et al.
patent: 4797891 (1989-01-01), Uomi et al.
Appl. Phys. Lett. 42(2) "Single Longitudinal mode operation of high power multiple-stripe injection lasers" D. E. Ackley (Jan. 15, 1983).

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