Phase memorization for low leakage dielectric films

Details Phase memorization for low leakage dielectric films Phase memorization for low leakage dielectric films

2011-08-16

2011-08-16

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S304000, C257S310000, C257SE29343

Reexamination Certificate

active

07999351

ABSTRACT:
Embodiments of a phase-stable amorphous high-κ dielectric layer in a device and methods for forming the phase-stable amorphous high-κ dielectric layer in a device are generally described herein. Other embodiments may be described and claimed.

REFERENCES:
patent: 6953721 (2005-10-01), Agarwal
patent: 7728376 (2010-06-01), Matsui et al.
patent: 2005/0212031 (2005-09-01), Yamamoto
patent: 2006/0060930 (2006-03-01), Metz
patent: 10-2003-0408742 (2003-12-01), None
patent: 10-2005-0042171 (2005-05-01), None
patent: 2009/158193 (2009-12-01), None
patent: 2009/158193 (2010-03-01), None
International Search Report/Written Opinion for Patent Application No. PCT/US2009/046897, mailed Feb. 3, 2010, 10 pages.
Gilbert Dewey, et al., “Controlled Deposition of HFO2 and ZRO2 Dielectrics”, U.S. Appl. No. 11/863,211, filed Sep. 27, 2007.
International Preliminary Report on Patentability received for PCT Patent Application No. PCT/US2009/046897, mailed on Jan. 13, 2011, 4 pages.

Affiliated with

Also associated with

Rating

Phase memorization for low leakage dielectric films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase memorization for low leakage dielectric films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase memorization for low leakage dielectric films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2662192