Phase-locked semiconductor laser device

Details Phase-locked semiconductor laser device Phase-locked semiconductor laser device

1982-04-07

1985-04-02

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 45, H01S 319

Patent

active

045091730

ABSTRACT:
A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.

REFERENCES:
patent: 4185256 (1980-01-01), Scifres et al.
patent: 4255717 (1981-03-01), Scifres et al.
patent: 4369513 (1983-01-01), Umeda et al.

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