Phase distortion using MOS nonlinear capacitance

Details Phase distortion using MOS nonlinear capacitance Phase distortion using MOS nonlinear capacitance

2006-09-19

2006-09-19

Maung, Nay (Department: 2618)

Telecommunications

Carrier wave repeater or relay system

Frequency or phase modulation

C455S114100, C455S114300, C455S127100, C327S210000, C327S389000, C327S284000, C330S107000, C330S149000, C330S151000, C330S294000, C330S302000, C330S307000

Reexamination Certificate

active

07110718

ABSTRACT:
RF phase distortion circuits and methods for controllably phase distorting an RF signal based on amplitude of the RF signal. An MOS device is provided having a body of a first conductivity type and at least one region of a second conductivity type in the body, with a conductive layer over at least part of the body and the region of the second conductivity type and insulated therefrom. The MOS device may be coupled into a phase distortion circuit individually or in back-to-back pairs and biased to invert the body under the conductive layer for small signal amplitudes and not for large signal amplitudes, or to not invert the body under the conductive layer for small signal amplitudes and to invert the body under the conductive layer for large signal amplitudes. Various embodiments are disclosed.

REFERENCES:
patent: 2805398 (1957-09-01), Albersheim
patent: 2002/0071452 (2002-06-01), Abraham
Merrimac Industries, Inc., “Quadrature Hybrids 90° Power Dividers/Combiners 10 kHz to 40 GHz General Information”, Mar. 21, 1996.
Jeong, Yong-Chae et al., “Design of a Predistortive High Power Amplifier Using Carrier Complex Power Series Analysis”, Microwave Journal, Apr. 2002, pp. 92, 94-96, 98, 101, 102.

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