Phase difference specifying method

Details Phase difference specifying method Phase difference specifying method

2007-02-27

2007-02-27

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S311000, C430S312000, C382S144000

Reexamination Certificate

active

11420809

ABSTRACT:
A phase shift mask comprises first and second mask patterns. The first mask pattern is a backing film enabling a first optical image to be formed on a substrate. The first optical image forms a resist pattern having a width that changes depending on the distance between the phase shift mask and the substrate. The second mask pattern is a semi-transmissive film enabling a second optical image to be formed on the substrate. The second optical image can form a resist pattern having a width that changes depending on the distance between the phase shift mask and the substrate and on a thickness of the semi-transmissive film. The duty ratio of the second mask is set so that the rate at which the width of the first optical image varies will be the same as the rate at which the width of the second optical image varies.

REFERENCES:
patent: 5786112 (1998-07-01), Okamoto et al.
patent: 7075639 (2006-07-01), Adel et al.
patent: 10-78647 (1998-03-01), None

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