Phase dependent SEM IC chip testing with voltage contrast

Details Phase dependent SEM IC chip testing with voltage contrast Phase dependent SEM IC chip testing with voltage contrast

1981-04-06

1983-06-07

Smith, Alfred E.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250310, 324158R, 324 73AT, G21K 510, G01N 23225, G01R 1512

Patent

active

043873049

ABSTRACT:
Properties of a dynamically operated integrated circuit (IC) are examined by a nondestructive, noncontact method utilizing a scanning electron microscope such that both logic state information as well as timing information regarding signal propagation delays are presented as contrast differences on the SEM video monitor corresponding to phase conditions on the IC.

REFERENCES:
patent: 3678384 (1969-08-01), Oatley
patent: 3919550 (1975-11-01), Banbury
patent: 3937959 (1976-02-01), Namae
patent: 3944829 (1976-03-01), Sato
Scanning Electron Microscopy for Complex Microcircuit Analysis by John J. Bart, Rome Air Development Center, Reliability Physics Section, Griffis AFB, NY 13441, 16th Annual Proceedings Reliability Physics 1978.
Use of Scanning Electron Microscope for Stroboscopic Voltage Contrast Studies for Electrical Failure Analysis of Dynamic 4096-bit MOS Memory Devices by E. Wolfgang, J. Otto and D. Kantz, INSPEC, Patent Associated Literature S159-760T-D.
Isolation of Potential Contrast in the Scanning Electron Microscope by C. W. Oatley, Journal of Scientific Instruments, (Journal of Physics E), 1979, Series 2, vol. 2.
Specialized Scanning Electron Microscopy Voltage Contrast Techniques for LSI Failure Analysis by Bernard Piwczyk and William Siu, Bell-Northern Research, Ottowa, Ontario, Canada, 12th Annual Proceedings Reliability Physics 1974.

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