Phase changeable memory devices and methods of forming the...

Details Phase changeable memory devices and methods of forming the... Phase changeable memory devices and methods of forming the...

2006-02-07

2006-02-07

Lee, Hsien-Ming (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S200000, C257S246000, C438S093000, C438S095000, C438S398000

Reexamination Certificate

active

06995388

ABSTRACT:
A phase changeable memory device includes a substrate having a lower electrode disposed thereon. A phase changeable pattern is disposed on the lower electrode and an upper electrode is disposed on the phase changeable pattern that has a tip that extends therefrom and is directed toward the lower electrode.

REFERENCES:
patent: 6117720 (2000-09-01), Harshfield
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6566700 (2003-05-01), Xu
patent: 6605527 (2003-08-01), Dennison et al.
patent: 6764894 (2004-07-01), Lowrey
patent: 2004-32955 (2004-04-01), None
Korean Office Action corresponding to Korean patent application 2002-67351, dated Aug. 25, 2004.

Affiliated with

Also associated with

Rating

Phase changeable memory devices and methods of forming the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase changeable memory devices and methods of forming the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase changeable memory devices and methods of forming the... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3683272