Phase-change-type semiconductor memory device

Details Phase-change-type semiconductor memory device Phase-change-type semiconductor memory device

2006-01-11

2008-11-11

Sefer, A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S005000, C257S506000, C257S544000, C257SE31029

Reexamination Certificate

active

07449711

ABSTRACT:
A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the bit lines and selection lines. Each memory cell includes a chalcogenide element and a diode connected in series, and an n-type contact layer underlying the n-type layer of the diode. Adjacent two of memory cells share a common bit-line contact plug connecting the n-type contact layers and the bit line.

REFERENCES:
patent: 5166758 (1992-11-01), Ovshinsky et al.
patent: 2006/0284157 (2006-12-01), Chen et al.
patent: 5-21740 (1993-01-01), None

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