Phase change tip storage cell

Details Phase change tip storage cell Phase change tip storage cell

2011-04-19

2011-04-19

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S004000, C257S005000, C257SE31015, C257SE31029, C257SE45002, C257SE47005, C438S095000, C438S097000, C438S253000, C438S396000, C438S597000

Reexamination Certificate

active

07928420

ABSTRACT:
A storage cell, integrated circuit (IC) chip with one or more storage cells that may be in an array of the storage cells and a method of forming the storage cell and IC. Each storage cell includes a stylus, the tip of which is phase change material. The phase change tip may be sandwiched between an electrode and conductive material, e.g., titanium nitride (TiN), tantalum nitride (TaN) or n-type semiconductor. The phase change layer may be a chalcogenide and in particular a germanium (Ge), antimony (Sb), tellurium (Te) (GST) layer.

REFERENCES:
patent: 5920788 (1999-07-01), Reinberg
patent: 6507061 (2003-01-01), Hudgens et al.
patent: 6586761 (2003-07-01), Lowrey
patent: 6908812 (2005-06-01), Lowrey
patent: 6937507 (2005-08-01), Chen
patent: 7012273 (2006-03-01), Chen

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