Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-06-03
2008-06-03
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S246000, C257SE29234, C257SE29235, C257SE29236, C257SE29238, C257SE29240, C257SE29239
Reexamination Certificate
active
07381981
ABSTRACT:
The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.
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Abbas, et al., “Electrically Alterable Resistors”, IBM TDB vol. 24, No. 7A, Dec. 1981, pp. 3460-3461.
Aitken John M.
Chen Fen
Feng Kai D.
Harding Riyon
International Business Machines - Corporation
Loke Steven
Nguyen Tram H
Scully , Scott, Murphy & Presser, P.C.
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