Phase-change RAM containing AIN thermal dissipation layer...

Details Phase-change RAM containing AIN thermal dissipation layer... Phase-change RAM containing AIN thermal dissipation layer...

2007-12-11

2007-12-11

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE23051, C257S001000, C257S003000, C257S004000, C257S005000

Reexamination Certificate

active

11270711

ABSTRACT:
Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.

REFERENCES:
patent: 5172213 (1992-12-01), Zimmerman
patent: 2004/0113136 (2004-06-01), Dennison

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