Phase change memory with various grain sizes

Details Phase change memory with various grain sizes Phase change memory with various grain sizes

2011-02-22

2011-02-22

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE45002

Reexamination Certificate

active

07893420

ABSTRACT:
A memory device includes a phase change element, which further includes a first phase change layer having a first grain size; and a second phase change layer over the first phase change layer. The first and the second phase change layers are depth-wise regions of the phase change element. The second phase change layer has a second average grain size different from the first average grain size.

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