Phase change memory with ovonic threshold switch

Details Phase change memory with ovonic threshold switch Phase change memory with ovonic threshold switch

2010-02-04

2011-12-27

Louie, Wai Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge injection device

C257S298000, C257SE21068

Reexamination Certificate

active

08084789

ABSTRACT:
A phase change memory includes a memory element and a selection element. The memory element is embedded in a dielectric and includes a resistive element having at least one sublithographic dimension and a storage region in contact with the resistive element. The selection element includes a chalcogenic material embedded in a dielectric. The chalcogenic material and the storage region are part of a stack having a common etched edge.

REFERENCES:
patent: 2002/0070379 (2002-06-01), Dennison
patent: 2005/0032269 (2005-02-01), Xu et al.
patent: 2005/0051901 (2005-03-01), Chen

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