Phase change memory with layered insulator

Details Phase change memory with layered insulator Phase change memory with layered insulator

2007-12-20

2011-12-13

Richards, N Drew (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S001000, C257S002000, C257S004000, C257S005000, C365S148000

Reexamination Certificate

active

08076664

ABSTRACT:
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating layers and the pores may be filled with heaters, chalcogenide layers, and electrodes in some embodiments. The use of the two different insulator layers enables embodiments where thermal losses may be reduced and an amorphous region may be maintained along the entire length of the phase change material layer.

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