Phase change memory with damascene memory element

Details Phase change memory with damascene memory element Phase change memory with damascene memory element

2006-11-14

2006-11-14

Gurley, Lynne A. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S296000, C257S298000, C257S529000, C257S536000, C257S537000, C257S614000

Reexamination Certificate

active

07135696

ABSTRACT:
A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.

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Van Landingham, “Circuit Applications of Ovonic Switching Devices”, IEEE Transactions on Electron Devices, vol. ED-20, No. 2, Feb. 1973.

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