Phase change memory that switches between crystalline phases

Details Phase change memory that switches between crystalline phases Phase change memory that switches between crystalline phases

2011-04-12

2011-04-12

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

C257S050000, C257S052000, C365S148000, C365S163000

Reexamination Certificate

active

07923724

ABSTRACT:
A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal states. Because these states are more stable, they are less prone to drift than the amorphous state conventionally utilized in phase change memories.

REFERENCES:
patent: 7005665 (2006-02-01), Furkay et al.
patent: 7589343 (2009-09-01), Lowrey
patent: 2002/0154531 (2002-10-01), Lowrey et al.
patent: 2005/0088872 (2005-04-01), Ma
patent: 2006/0109042 (2006-05-01), Hsu et al.

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