Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2007-09-28
2010-10-12
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S102000, C257S003000, C257S004000, C257SE21001
Reexamination Certificate
active
07811851
ABSTRACT:
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
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Merchant Tushar P.
Muralidhar Ramachandran
Rao Rajesh A.
Clingan, Jr. James L.
Dolezal David G.
Freescale Semiconductor Inc.
Taylor Earl N
Vu David
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