Phase change memory including a plurality of electrically...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S900000, C257S245000, C257S246000, C257S002000

Reexamination Certificate

active

07883930

ABSTRACT:
A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

REFERENCES:
patent: 6670628 (2003-12-01), Lee et al.
patent: 6746892 (2004-06-01), Lee et al.
patent: 7288781 (2007-10-01), Kozicki
patent: 7306961 (2007-12-01), Nunoue et al.
patent: 2002/0045323 (2002-04-01), Lowrey et al.
patent: 2003/0031074 (2003-02-01), Tran et al.
patent: 2004/0256662 (2004-12-01), Black et al.
patent: 2006/0160304 (2006-07-01), Hsu et al.
patent: 2007/0052009 (2007-03-01), Xie et al.
patent: 11-170378 (1999-06-01), None
patent: 2003-155365 (2003-05-01), None
patent: 2004-312002 (2004-11-01), None
patent: WO 03/050872 (2003-06-01), None
patent: WO 03/085740 (2003-10-01), None
patent: WO 2004/025640 (2004-03-01), None
patent: WO 2005/041303 (2005-05-01), None
E. Varesi, et al., “Advance in Phase Change Memory Technology”, Proceedings of EPCOS 2004, paper 16, Sep. 4, 2004, 8 pages.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Phase change memory including a plurality of electrically... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Phase change memory including a plurality of electrically..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Phase change memory including a plurality of electrically... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2647528

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.