Phase change memory including a plurality of electrically...

Details Phase change memory including a plurality of electrically... Phase change memory including a plurality of electrically...

2011-02-08

2011-02-08

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S900000, C257S245000, C257S246000, C257S002000

Reexamination Certificate

active

07883930

ABSTRACT:
A phase change memory including at least a storage cell which includes a first electrode, an electrically conductive portion provided on the first electrode and having at least two electrically conductive bodies with approximately the same shape provided on the first electrode, the electrically conductive bodies being spaced by a high resistance film with a high resistance, a recording layer provided on the electrically conductive portion and having phase change material which can change between a first phase state with a first specific resistance and a second phase state with a second specific resistance different from the first specific resistance, and a second electrode provided on the recording layer.

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E. Varesi, et al., “Advance in Phase Change Memory Technology”, Proceedings of EPCOS 2004, paper 16, Sep. 4, 2004, 8 pages.

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