Phase change memory having multilayer thermal insulation

Details Phase change memory having multilayer thermal insulation Phase change memory having multilayer thermal insulation

2005-11-02

2008-08-26

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000

Reexamination Certificate

active

07417245

ABSTRACT:
A memory cell includes a first electrode, a second electrode, phase-change material contacting the first electrode and the second electrode, multilayer thermal insulation contacting the phase-change material, and dielectric material contacting the multilayer thermal insulation. The multilayer thermal insulation may include at least an electrically isolating layer and an electrically conducting layer.

REFERENCES:
patent: 5933365 (1999-08-01), Klersy et al.
patent: 6908812 (2005-06-01), Lowrey
patent: 2001/0002046 (2001-05-01), Reinberg et al.
patent: 2003/0151041 (2003-08-01), Chiang
patent: 2005/0227496 (2005-10-01), Park et al.
patent: 2006/0091476 (2006-05-01), Pinnow et al.
patent: 2006/0175596 (2006-08-01), Happ et al.
patent: 2006/0175597 (2006-08-01), Happ
patent: 2006/0175599 (2006-08-01), Happ
patent: WO 2006/084856 (2006-08-01), None
patent: WO 2006/084857 (2006-08-01), None
patent: 2005-99589 (2005-10-01), None
S.L. Cho et al., “Highly Scalable On-axis Confined Cell Structure for High Density PRAM beyond 256Mb”, VLSI 2005.
V. Giraud et al., “Thermal Characterization and Analysis of Phase Change Random Access Memory”, JAP 98, 013520, 2005.
H. Horii et al., “A Novel Cell Technology Using N-Doped GeSbTe Films for Phase Change RAM”, VLSI, 2003.
Y.N. Hwang et al., “Full Integration and Reliability Evaluation of Phase-Change RAM based on 0.24μm-CMOS Technologies”, VLSI, 2003.
S. Lai et al., “OUM—A 180 nm Nonvolatile Memory Cell Element Technology for Stand Alone and Embedded Applications”, IEDM 2001.
F. Pellizer et al., “Novel uTrench Phase Change Memory Cell for Embedded and Stand Alone Non-Volatile Memory Applications”, VLSI 2004.
E.K. Kim et al., “Thermal Boundary Resistance at Ge2Sb2Te5 'ZnS:SiO2 Interface”, APL 76, 3864, 2000.
European Search Result dated Mar. 5, 2007.

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