Phase change memory elements using self-aligned phase change...

Details Phase change memory elements using self-aligned phase change... Phase change memory elements using self-aligned phase change...

2011-06-28

2011-06-28

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S042000, C257SE45002

Reexamination Certificate

active

07968862

ABSTRACT:
A phase change memory element and method of forming the same. The memory element includes a substrate supporting a first electrode. An insulating material element is positioned over the first electrode, and a phase change material layer is formed over the first electrode and surrounding the insulating material element such that the phase change material layer has a lower surface that is in electrical communication with the first electrode. The memory element also has a second electrode in electrical communication with an upper surface of the phase change material layer.

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Notification of Transmittal of International Search Report and Written Opinion of the International Searching Authority Issued Oct. 31, 2007, International Search Report and Written Opinion.

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