Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-04-11
2006-04-11
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S004000, C365S148000, C438S800000
Reexamination Certificate
active
07026639
ABSTRACT:
Provided is a phase-change element capable of operating with low power consumption and a method of manufacturing the same. The phase-change element comprises a first electrode used as a heating layer, a second electrode, which is laterally disposed adjacent to the first electrode, and a memory layer made of a phase-change material located between and contacting the side surfaces of the first electrode and the second electrode.
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Cho Seong Mok
Kim Kwi Dong
Lee Nam Yeal
Ryu Sangouk
Yoon Sung Min
Blakely & Sokoloff, Taylor & Zafman
Electronics and Telecommunications Research Institute
Pert Evan
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