Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-06-28
2011-06-28
Jackson, Jr., Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002
Reexamination Certificate
active
07968861
ABSTRACT:
Thin-film phase-change memories having small phase-change switching volume formed by overlapping thin films. Exemplary embodiments include a phase-change memory element, including a first phase change layer having a resistance, a second phase change layer having a resistance, an insulating layer disposed between the first and second phase change layers; and a third phase change layer having a resistance, and coupled to each of the first and second phase change layers, bridging the insulating layer and electrically coupling the first and second phase change layers, wherein the resistance of the third phase change layer is greater than both the resistance of the first phase change layer and the second phase change layer.
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Burr Geoffrey W.
Chen Yi-Chou
Lung Hsiang-Lan
Budd Paul A
Cantor & Colburn LLP
International Business Machines - Corporation
Jackson, Jr. Jerome
Macronix International Co. Ltd.
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