Phase-change memory element

Details Phase-change memory element Phase-change memory element

2011-04-05

2011-04-05

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C257S005000, C257SE45002

Reexamination Certificate

active

07919768

ABSTRACT:
A phase-change memory cell is proposed. The phase-change memory includes a bottom electrode; a phase-change spacer formed to contact the bottom electrode; an electrical conductive layer having a vertical portion and a horizontal portion, wherein the electrical conductive layer electrically connects to the phase-change spacer via the horizontal portion; and a top electrode electrically connected to the electrical conductive layer via the vertical portion of the electrically conductive layer.

REFERENCES:
patent: 6815266 (2004-11-01), Rodgers et al.
patent: 6864503 (2005-03-01), Lung
patent: 7504652 (2009-03-01), Huang
patent: 2006/0108667 (2006-05-01), Lung
patent: 2007/0012905 (2007-01-01), Huang

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