Phase change memory devices and methods for fabricating the...

Details Phase change memory devices and methods for fabricating the... Phase change memory devices and methods for fabricating the...

2007-08-08

2010-12-21

Sandvik, Benjamin P (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE47001

Reexamination Certificate

active

07855378

ABSTRACT:
Phase change memory devices and methods for manufacturing the same are provided. An exemplary embodiment of a phase change memory device includes a bottom electrode formed over a substrate. A first dielectric layer is formed over the bottom electrode. A heating electrode is formed in the first dielectric layer and partially protrudes over the first dielectric layer, wherein the heating electrode includes an intrinsic portion embedded within the first dielectric layer, a reduced portion stacked over the intrinsic portion, and an oxide spacer surrounding a sidewall of the reduced portion. A phase change material layer is formed over the first dielectric layer and covers the heating electrode, the phase change material layer contacts a top surface of the reduced portion of the heating electrode. A top electrode is formed over the phase change material layer and contacts the phase change material layer.

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