Phase change memory devices and methods for fabricating the...

Details Phase change memory devices and methods for fabricating the... Phase change memory devices and methods for fabricating the...

2006-11-17

2010-06-29

Phung, Anh (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257SE47001, C257SE29002

Reexamination Certificate

active

07745811

ABSTRACT:
Phase change memory devices and methods for fabricating the same. An exemplary phase change memory device includes a conductive element formed in a dielectric layer. A phase change material layer is formed in the dielectric layer. A conductive layer extends in the dielectric layer to respectively electrically connect the phase change layer and a sidewall of the conductive element.

REFERENCES:
patent: 6838692 (2005-01-01), Lung
patent: 2005/0029503 (2005-02-01), Johnson
patent: 2005/0110983 (2005-05-01), Jeong et al.
patent: 2005/0245030 (2005-11-01), Ha et al.
patent: 2006/0099795 (2006-05-01), Lee et al.
patent: 2006/0108667 (2006-05-01), Lung
patent: 2007/0278529 (2007-12-01), Lai et al.
patent: 2007/0290185 (2007-12-01), Wang

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